Semiconductor device and method of manufacturing the same
US9130013B2 · kind B2 · utility
1Cited by
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6Claims
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Key dates
| Filing date | Jul 15, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.