Method for manufacturing a thin film semiconductor device
US9130048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2012 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Jan 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.