Forming crown active regions for FinFETs

US9130058B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chen-Ping Chen · Toucheng Township, TW
• Hui-Min Lin
• Ming-Jie Huang · Hsinchu, TW
• Tung Ying Lee · Baoshan, TW

Key dates

• Filing date: Sep 1, 2010
• Grant date: Sep 8, 2015
• Expiry date: Jan 5, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

A device includes a plurality of intra-device insulation regions having a first height; and a plurality of semiconductor fins horizontally spaced apart from each other by the plurality of intra-device insulation regions. A portion of the plurality of semiconductor fins is disposed above the plurality of intra-device insulation regions. The device further includes a first inter-device insulation region and a second inter-device insulation region with the plurality of semiconductor fins disposed therebetween. The first and the second inter-device insulation regions have a second height greater than the first height.