Backside illuminated image sensor and method of manufacturing the same

US9130072B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chiu-Jung Chen · Tainan, TW
• Chen-Chun Chen · Hsinchu, TW
• Fu-Tsun Tsai · Tainan, TW
• Chi-Cherng Jeng · Tainan, TW
• Hsin-Chi Chen · Tainan, TW

Key dates

• Filing date: Apr 15, 2014
• Grant date: Sep 8, 2015
• Expiry date: Apr 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A backside illuminated (BSI) image sensor device includes a substrate including a front side and a back side; a radiation-sensing region in the substrate; a metal post with a longitudinal height and disposed over the back side; and a color filter adjacent to the metal post and substantially over the radiation-sensing region. The radiation-sensing region is configured to detect a radiation wave entering from the back side.