Inventor · Tainan, TW

Chi-Cherng Jeng

117Patents
6h-index
91Co-inventors
77Inventor score

Filing activity: Nov 22, 2002 → Jul 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6830981B2 Vertical nanotube transistor and process for fabricating the same Emerging Cross-Sectional Technologies 22 Expired
US9130072B1 Backside illuminated image sensor and method of manufacturing the same Electricity 18 Active
US9337192B2 Metal gate stack having TaAlCN layer Electricity 11 Active
US9123839B2 Image sensor with stacked grid structure Electricity 7 Active
US9293490B2 Deep trench isolation with air-gap in backside illumination image sensor chips Electricity 7 Active
US9130077B2 Structure of dielectric grid with a metal pillar for semiconductor device Electricity 6 Active
US10276620B2 Image sensor device and method for forming the same Electricity 6 Active
US9768221B2 Pad structure layout for semiconductor device Electricity 6 Active
US9024369B2 Metal shield structure and methods for BSI image sensors Electricity 6 Active
US9337303B2 Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer Electricity 5 Active
US9640456B2 Support structure for integrated circuitry Electricity 4 Active
US9490365B2 Structure and formation method of fin-like field effect transistor Electricity 4 Active
US10014224B2 Structure and formation method of fin-like field effect transistor Electricity 4 Active
US8816415B2 Photodiode with concave reflector Electricity 4 Active
US10056426B2 Apparatus and method for fabricating a light guiding grid Physics 4 Active
US9721883B1 Integrated circuit and manufacturing method thereof Electricity 3 Active
US10340192B2 FinFET gate structure and method for fabricating the same Electricity 3 Active
US9627426B2 Image sensor device and method for forming the same Electricity 3 Active
US9591242B2 Black level control for image sensors Electricity 3 Active
US9502538B2 Structure and formation method of fin-like field effect transistor Electricity 3 Active
US9824929B2 FinFET gate structure and method for fabricating the same Electricity 3 Active
US9478660B2 Protection layer on fin of fin field effect transistor (FinFET) device structure Electricity 2 Active
US9773911B2 Fin field effect transistor and fabricating method thereof Electricity 2 Active
US9324752B2 Image sensor device with light blocking structure Electricity 2 Active
US9548329B2 Backside illuminated image sensor and method of manufacturing the same Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.