Trench isolation for monolithically isled solar photovoltaic cells and modules
US9130076B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2015 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Jan 20, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.