Semiconductor structure for emitting light, and method for manufacturing such a structure
US9130099B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2012 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | May 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor structure for emitting light including a substrate made of a first semi-conductor material having a first type of conductivity, a first electrical contact, a second semiconductor material, having a second type of conductivity to form a junction, a second electrical contact contacting the second semiconductor material, a polarizer configured to polarize at least one portion of the semiconductor structure, and a plurality of micro- or nano-structures each including a first end connected to the substrate. Each micro- or nano-structure includes at least one portion made from the second semiconductor material, or each micro- or nano-structure having the first type of conductivity, a second end contacting the second semiconductor material to form the junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.