Group III-V substrate material with thin buffer layer and methods of making
US9130120B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.