Magnetic memory and method for manufacturing the same
US9130143B2 · kind B2 · utility
8Cited by
5References
14Claims
0Family size
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.