Inventor · Seongnam-si, KR

Youngmin EEH

33Patents
10h-index
31Co-inventors
67Inventor score

Filing activity: Aug 9, 2013 → Dec 9, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9184374B2 Magnetoresistive element Electricity 14 Active
US10263178B2 Magnetic memory device Electricity 13 Active
US10103318B2 Magnetoresistive element Electricity 13 Active
US9947862B2 Magnetoresistive memory device Electricity 13 Active
US9293695B2 Magnetoresistive element and magnetic random access memory Electricity 12 Active
US9620561B2 Magnetoresistive element and manufacturing method thereof Electricity 12 Active
US9705076B2 Magnetoresistive element and manufacturing method of the same Electricity 11 Active
US10510950B2 Magnetoresistive memory device Electricity 11 Active
US9741928B2 Magnetoresistive element and magnetic random access memory Electricity 11 Active
US9252357B2 Magnetoresistive element Electricity 11 Active
US8995181B2 Magnetoresistive element Electricity 10 Active
US9269890B2 Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer Electricity 10 Active
US9461240B2 Magnetoresistive memory device Electricity 10 Active
US9991313B2 Magnetic memory and manufacturing method of the same Electricity 9 Active
US9640584B2 Method of manufacturing a magnetoresistive memory device Electricity 8 Active
US10170519B2 Magnetoresistive element and memory device Electricity 8 Active
US10026891B2 Magnetoresistive element Electricity 8 Active
US9209386B2 Magneto-resistive element having a ferromagnetic layer containing boron Electricity 8 Active
US9142756B2 Tunneling magnetoresistive element having a high MR ratio Electricity 8 Active
US9130143B2 Magnetic memory and method for manufacturing the same Electricity 8 Active
US9178137B2 Magnetoresistive element and magnetic memory Electricity 7 Active
US10090459B2 Magnetoresistive element Electricity 7 Active
US10490732B2 Magnetic memory device with sidewall layer containing boron and manufacturing method thereof Electricity 4 Active
US11201189B2 Semiconductor device having rare earth oxide layer and method of manufacturing the same Electricity 3 Active
US10170691B2 Electronic device and method for fabricating the same Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.