Laser diode assembly and method for producing a laser diode assembly

US9130353B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Alfred Lell · Maxhütte-Haidhof, DE
• Martin Strassburg · Tegernheim, DE

Key dates

• Filing date: Jan 31, 2011
• Grant date: Sep 8, 2015
• Expiry date: Jun 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/173
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.