Method for determining BSIMSOI4 DC model parameters

US9134361B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Jing Chen · Shanghai, CN
• Qingqing Wu · Shanghai, CN
• Jiexin Luo · Shanghai, CN
• Zhan Chai · Shanghai, CN
• Xi Wang · Shanghai, CN

Key dates

• Filing date: Sep 25, 2011
• Grant date: Sep 15, 2015
• Expiry date: Oct 2, 2032

Classification

• Technology area (CPC G): Physics
• CPC primary: G06F30/367
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model.