System and method for dark field inspection
US9134633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jan 15, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/06113
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a method for fabricating a semiconductor structure. The method comprises providing a substrate and a patterned layer formed on the substrate, one or more overlay marks being formed on the patterned layer; performing a pre-film-formation overlay inspection using a bright field (BF) inspection tool to receive a pre-film-formation data on the one or more overlay marks on the patterned layer; forming one or more layers on the patterned layer; performing a post-film-formation overlay inspection using a dark field (DF) inspection tool to receive a post-film-formation data on the one or more overlay marks underlying the one or more layers; and determining whether the pre-film-formation data matches the post-film-formation data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.