Mechanisms for forming image-sensor device with deep-trench isolation structure

US9136298B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Jeng-Shyan Lin · Tainan, TW
• Dun-Nian Yaung · Taipei, TW
• Jen-Cheng Liu · Baoshan, TW
• Feng-Chi Hung · Kaohsiung, TW

Key dates

• Filing date: Sep 3, 2013
• Grant date: Sep 15, 2015
• Expiry date: Sep 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

Embodiments of mechanisms of for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region operable to detect incident radiation that enters the substrate through the back surface. The image-sensor device further includes a doped isolation region formed in the substrate and adjacent to the radiation-sensing region. In addition, the image-sensor device includes a deep-trench isolation structure formed in the doped isolation region. The deep-trench isolation structure includes a trench extending from the back surface and a negatively charged film covering the trench.