Patent · US Active

Silicon on nothing devices and methods of formation thereof

US9136328B2 · kind B2 · utility

2Cited by

7References

36Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Alessia Scire · Dresden, DE
Steffen Bieselt · Wehlen, DE

Key dates

Filing date	Oct 9, 2012
Grant date	Sep 15, 2015
Priority date	—
Expiry date	Jul 26, 2033

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.