Method to produce high electron mobility transistors with Boron implanted isolation
US9136345B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2014 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Jul 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to produce high electron mobility transistors with Boron implanted isolation comprises the following steps: on a substrate forming in sequence a nucleation layer, a buffer layer, a barrier layer and a cap layer; coating a photoresist layer on the cap layer; photomasking and by exposure eliminating the photoresist layer of at least one isolation region; executing plural times an ion implantation process including: adjusting an incident angle of a Boron ion beam with respect to the substrate, and implanting the Boron ion beam into the cap layer, the barrier layer, the buffer layer, the nucleation layer and the substrate within the at least one isolation region so as to form an isolation structure while rotating the substrate by a rotation angle; eliminating the rest of the photoresist layer by exposure; and forming a source, a drain and a gate on the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.