High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently
US9136346B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that can more efficiently absorb a stored hole includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first electrode, a second electrode, a control electrode, and a third electrode. The second semiconductor layer is provided on the first semiconductor layer and has a band gap narrower than that of the first semiconductor layer. The second semiconductor layer includes a first portion and a second portion which is provided together with the first portion and contains an activated acceptor. The third semiconductor layer is provided on the first portion and has a band gap wider than or equal to the band gap of the second semiconductor layer. The first and the second electrodes are provided on the third semiconductor layer. The control electrode is provided between the first electrode and the second electrode. The third electrode is provided on the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.