Yasuhiro Isobe
29Patents
3h-index
23Co-inventors
59Inventor score
Filing activity: Nov 24, 2009 → Oct 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8356623B2 | Mass flow meter and mass flow controller | Emerging Cross-Sectional Technologies | 45 | Active |
| US9223318B2 | Mass flow controller system | Emerging Cross-Sectional Technologies | 26 | Active |
| US8851105B2 | Mass flow meter, mass flow controller, mass flow meter system and mass flow control system containing the mass flow meter and the mass flow controller | Emerging Cross-Sectional Technologies | 22 | Active |
| US11264899B2 | Semiconductor device | Emerging Cross-Sectional Technologies | 1 | Active |
| US10998433B2 | Semiconductor device | Electricity | 1 | Active |
| US10771057B1 | Semiconductor device | Electricity | 1 | Active |
| US9627489B2 | Semiconductor device | Electricity | 1 | Active |
| US9484429B2 | High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently and method for manufacturing the same | Electricity | 0 | Active |
| US12170316B2 | Nitride semiconductor device with element isolation area | Electricity | 0 | Active |
| US9887281B2 | Semiconductor device | Electricity | 0 | Active |
| US10074739B2 | Semiconductor device having electric field near drain electrode alleviated | Electricity | 0 | Active |
| US11830916B2 | Nitride semiconductor device with element isolation area | Electricity | 0 | Active |
| US9543146B2 | Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material | Electricity | 0 | Active |
| US12273101B2 | Semiconductor device | Electricity | 0 | Active |
| US12362264B2 | Semiconductor device | Electricity | 0 | Active |
| US9136346B2 | High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently | Electricity | 0 | Active |
| US11984387B2 | Plurality of stacked transistors attached by solder balls | Electricity | 0 | Active |
| US11508647B2 | Semiconductor device | Emerging Cross-Sectional Technologies | 0 | Active |
| US12062651B2 | Semiconductor device | Electricity | 0 | Active |
| US12046668B2 | Semiconductor device | Electricity | 0 | Active |
| US12002858B2 | Semiconductor device | Electricity | 0 | Active |
| US11251298B2 | Power semiconductor device | Electricity | 0 | Active |
| US11290100B2 | Semiconductor device | Electricity | 0 | Active |
| US12027614B2 | Semiconductor device | Electricity | 0 | Active |
| US12328924B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.