Semiconductor device and manufacturing method for the same
US9136373B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 16, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device and a manufacturing method for the same are provided. The semiconductor substrate includes a gate structure, a first doped contact region, a second doped contact region and a well doped region. The gate structure is on the semiconductor substrate, and has a first gate sidewall and a second gate sidewall opposite to the first gate sidewall. The first doped contact region has a first type conductivity and is formed in the semiconductor substrate on the first gate sidewall of the gate structure. The second doped contact region has the first type conductivity and is formed in the semiconductor substrate on the second gate sidewall of the gate structure. The well doped region has the first type conductivity and is under the first doped contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.