Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
US9136430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Aug 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1), and has a lattice constant LP2 that is greater than LP1 and smaller than LP0. The third layer is formed on the second layer, includes AlxInyGa1-x-yN (0≦x<1, 0≦y<1, 0≦x+y<1), and has a lattice constant LP3 that is smaller than LP2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.