Method of forming a magnetic tunnel junction structure
US9136463B2 · kind B2 · utility
37Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2007 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Nov 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.