Phase-change random access memory device and method of manufacturing the same
US9136466B2 · kind B2 · utility
2Cited by
0References
6Claims
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Key dates
| Filing date | Dec 29, 2011 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Oct 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
A phase change random access memory device includes a bottom electrode contact formed within a bottom electrode contact hole, a phase-change material pattern formed to surround a side of an upper portion of the bottom electrode contact, and an insulating layer buried within the phase-change material pattern and formed on an upper surface of the bottom electrode contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.