Nonvolatile semiconductor memory device
US9136468B2 · kind B2 · utility
5Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2013 |
| Grant date | Sep 15, 2015 |
| Priority date | — |
| Expiry date | Mar 26, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell which stores data with two or more levels. The memory cell includes a structure includes a first electrode layer, a first semiconductor layer, a phase change film, an electrical insulating layer, a second semiconductor layer, and a second electrode layer arranged in order thereof, and the first semiconductor layer and the second semiconductor layer have carrier polarities different from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.