Patent · US Active

Process for manufacturing electro-mechanical systems

US9139425B2 · kind B2 · utility

90Cited by
0References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 7, 2010
Grant dateSep 22, 2015
Priority date
Expiry dateDec 7, 2030

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C1/00936
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.