Integrated circuit memory device with read-disturb control
US9142286B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Apr 15, 2013 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device (e.g., an integrated circuit memory device such as a static random access memory device) includes word line drivers. Each of the word line drivers includes a pull-up device that is coupled to a node via a shared line. A precharge device is coupled between a power supply and the node. The precharge device and a pull-up device for a selected word line driver are controlled to allow the power supply to charge the node and then to allow the charge stored in the node to flow into a word line corresponding to the selected word line driver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.