Uniform shallow trench isolation regions and the method of forming the same
US9142402B2 · kind B2 · utility
4Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes performing a plasma treatment on a first surface of a first material and a second surface of a second material simultaneously, wherein the first material is different from the second material. A third material is formed on treated first surface of the first material and on treated second surface of the second material. The first, the second, and the third materials may include a hard mask, a semiconductor material, and an oxide, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.