Method for producing semiconductor device
US9142411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2013 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.