Semiconductor mask blanks with a compatible stop layer
US9142423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.