Manganese oxide hard mask for etching dielectric materials
US9142488B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2013 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manganese oxide layer is deposited as a hard mask layer on substrate including at least a dielectric material layer. An optional silicon oxide layer may be formed over the manganese oxide layer. A patterned photoresist layer can be employed to etch the optional silicon oxide layer and the manganese oxide layer. An anisotropic etch process is employed to etch the dielectric material layer within the substrate. The dielectric material layer can include silicon oxide and/or silicon nitride, and the manganese oxide layer can be employed as an effective etch mask that minimizes hard mask erosion and widening of the etched trench. The manganese oxide layer may be employed as an etch mask for a substrate bonding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.