Semiconductor device and method for fabricating the same
US9142536B2 · kind B2 · utility
6Cited by
5References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Sep 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A method for manufacturing the semiconductor device may include forming a capping layer including a bit line contact hole on a substrate, forming a spacer on inner walls of the bit line contact hole, forming a bit line contact in the bit line contact hole, forming a bit line layer on the substrate, exposing the spacer by etching the bit line layer, and etching the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.