Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US9142554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Dec 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.