Pad design for backside illuminated image sensor
US9142586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2010 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.