Integrated electronic device with edge-termination structure and manufacturing method thereof
US9142646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of an integrated electronic device formed in a semiconductor body delimited by a lateral surface, which includes: a substrate made of a first semiconductor material; a first epitaxial region made of a second semiconductor material, which overlies the substrate and defines a first surface; a second epitaxial region made of a third semiconductor material, which overlies the first surface and is in contact with the first epitaxial region, the third semiconductor material having a bandgap narrower than the bandgap of the second semiconductor material; an active area, extending within the second epitaxial region and housing at least one elementary electronic component; and an edge structure, arranged between the active area and the lateral surface, and including a dielectric region arranged laterally with respect to the second epitaxial region, which overlies the first surface and is in contact with the first epitaxial region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.