High power ultraviolet light emitting diode with superlattice
US9142714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2012 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Feb 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process for forming a UV emitting diode is described. The process includes providing a substrate. A super-lattice is formed directly on the substrate at a temperature of at least 800 to no more than 1,300° C. wherein the super-lattice comprises AlxInyGa1-x-yN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A first conductive layer with a first type of conductivity is formed on the super-lattice wherein the first conductive layer comprises AlxInyGa1-x-yN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A quantum well region is formed on the first conductive layer wherein the quantum well region comprises AlxInyGa1-x-yN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A second conductive layer is formed on the quantum well with a second type of conductivity wherein the second conductive layer comprises AlxInyGa1-x-yN wherein 0<x≦1, 0≦y≦1 and 0<x+y≦1. A first metal contact is formed in electrical contact with the first conductive layer and a second metal contact is formed in electrical contact with the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.