Tunneling magnetoresistive element having a high MR ratio
US9142756B2 · kind B2 · utility
8Cited by
3References
4Claims
0Family size
Inventors
Key dates
| Filing date | Jan 16, 2014 |
| Grant date | Sep 22, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes a first ferromagnetic layer formed on a base substrate, a tunnel barrier layer formed on the first ferromagnetic layer, and a second ferromagnetic layer containing B formed on the tunnel barrier layer. The second ferromagnetic layer includes at least one of H, F, Cl, Br, I, C, O, and N, and a concentration of molecules of the at least one of H, F, Cl, Br, I, C, O, and N included in the second ferromagnetic layer is higher in a central portion in a depth direction of the second ferromagnetic layer than in an upper surface and a lower surface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.