Manufacturing method of silicon carbide single crystal
US9145622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2011 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a manufacturing method of a silicon carbide single crystal, a seed crystal made of silicon carbide is prepared. The seed crystal has a growth surface and a stacking fault generation region and includes a threading dislocation that reaches the growth surface. The growth surface is inclined at a predetermined angle from a (0001) plane. The stacking fault generation region is configured to cause a stacking fault in the silicon carbide single crystal when the silicon carbide single crystal is grown. The stacking fault generation region is located at an end portion of the growth surface in an offset direction that is a direction of a vector defined by projecting a normal vector of the (0001) plane onto the growth surface. The seed crystal is joined to a pedestal, and the silicon carbide single crystal is grown on the growth surface of the seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.