Patent · US Active

XMR sensors with high shape anisotropy

US9146287B2 · kind B2 · utility

1Cited by

5References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Juergen Zimmer · Neubiberg, DE
Klemens Pruegl · Regensburg, DE
Olaf Kuehn · Suhl, DE
Andreas Strasser · Graz, AT
Ralf-Rainer Schledz · St. Margarethen, AT
Norbert Thyssen · Dresden, DE

Key dates

Filing date	Nov 15, 2010
Grant date	Sep 29, 2015
Priority date	—
Expiry date	Aug 11, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10N59/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.