Method for isolating active regions in germanium-based MOS device
US9147597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2012 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jun 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a method for isolating active regions in a germanium-based MOS device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-SiGe layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a SiGe oxide layer on top is formed by means of two steps of oxidation in a case of the active regions are protected. Such two steps of oxidation using the polysilicon layer or the poly-SiGe layer as a sacrificial layer is advantageous to improve the isolation quality of a fabricated germanium dioxide and to reduce a beak effect occurred during a local field oxygen oxidation so as to dramatically elevate the performance of the germanium device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.