Wafer support system and method for separating support substrate from solid-phase bonded wafer and method for manufacturing semiconductor device
US9147599B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 10, 2014 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Apr 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6836
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and support substrate solid-phase bonded to back surface of the Si wafer. The method includes a step of irradiating the Si wafer with laser light with a wavelength which passes through the Si wafer and is focused on a solid-phase bonding interface between the Si wafer and support substrate to form a breaking layer in at least part of an outer circumferential portion of the solid-phase bonding interface, a step of separating the breaking layer; and a step of separating the solid-phase bonding interface. The method is capable of using a Si thin wafer without substantial wafer cracking at an initial stage where the wafer is inputted to a wafer process, capable of separating a support substrate from the Si thin wafer easily, and capable of reducing the wafer cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.