Method for forming a semiconductor structure
US9147612B2 · kind B2 · utility
6Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2013 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacturing method for forming a semiconductor structure, in which first, a substrate is provided, a hard mask is disposed on the substrate, the hard mask is then patterned to form a plurality of fin hard masks and a plurality of dummy fin hard masks, afterwards, a pattern transferring process is performed, to transfer the patterns of the fin hard masks and the fin hard masks into the substrate, so as to form a plurality of fin groups and a plurality of dummy fins. Each dummy fin is disposed on the end side of one fin group, and a fin cut process is performed, to remove each dummy fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.