Methods of fabricating semiconductor devices
US9147687B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2014 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the imprint pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.