Semiconductor device comprising an integrated capacitor and method of fabrication

US9147725B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Pierre Bar · Grenoble, FR
• Sylvain Joblot · Grenoble, FR

Key dates

• Filing date: Jul 5, 2013
• Grant date: Sep 29, 2015
• Expiry date: Sep 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A semiconductor device includes a substrate wafer and having a front face and a back face. A front hole is formed in the front face and a multilayer capacitor is formed in the front hole. A back hole is formed in the back face of the substrate wafer to expose at least a portion of the multilayer capacitor. A front electrical connection on the front face and a back electrical connection in the back hole are used to make electrical connection to first and second conductive plates of the multilayer capacitor which are separated by a dielectric layer. The front hole may have a cylindrical shape or an annular shape.