Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component
US9147806B2 · kind B2 · utility
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Key dates
| Filing date | Sep 15, 2011 |
| Grant date | Sep 29, 2015 |
| Priority date | — |
| Expiry date | Jul 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
Abstract
An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.