Patent · US Active

III-nitride quantum well structure and a light-emitting unit using the same

US9147808B2 · kind B2 · utility

0Cited by
3References
16Claims
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Key dates

Filing dateOct 24, 2014
Grant dateSep 29, 2015
Priority date—
Expiry dateOct 24, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/142
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.