Composition for forming tungsten oxide film and method for producing tungsten oxide film using same
US9152052B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 10, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Aug 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
[Object]To provide a composition for forming a tungsten oxide film from an aqueous solution, and also to provide a pattern formation method employing that composition.[Means]The present invention provides a tungsten oxide film-forming composition comprising: water, a water-soluble metatungstate, and at least one additive selected from the group consisting of anionic polymers, nonionic polymers, anionic surfactants, and tertiary amino group-containing nonionic surfactants. For forming a pattern, this composition can be employed in place of a silicon dioxide film-forming composition in a pattern formation process using an image reversal trilayer structure, a resist undercoat layer or a resist top protective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.