Memory device having RRAM-based non-volatile storage array
US9153343B2 · kind B2 · utility
12Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device includes a storage region, and a resistive-read-access-memory-based (RRAM-based or ReRAM-based) non-volatile storage array is disclosed herein. The storage region includes a first storage array and a second storage array. The first storage array includes a plurality of first storage cells. The second storage array includes a plurality of second storage cells. The second storage cells are configured to be in place of the first storage cells. The RRAM-based non-volatile storage array is configured to record at least one corresponding relationship between the first storage cells and the second storage cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.