Inventor · Baoshan, TW

Yue-Der Chih

105Patents
12h-index
66Co-inventors
89Inventor score

Filing activity: Jun 22, 1998 → Jun 21, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9165629B2 Method and apparatus for MRAM sense reference trimming Physics 52 Active
US8687412B2 Reference cell configuration for sensing resistance states of MRAM bit cells Physics 31 Active
US7119604B2 Back-bias voltage regulator having temperature and process variation compensation and related method of regulating a back-bias voltage Electricity 29 Expired
US8593854B1 Structure and method for forming conductive path in resistive random-access memory device Physics 25 Active
US9792987B1 Resistive random access memory device Electricity 22 Active
US8629706B2 Power switch and operation method thereof Electricity 20 Active
US7663916B2 Logic compatible arrays and operations Electricity 17 Active
US8902641B2 Adjusting reference resistances in determining MRAM resistance states Physics 15 Active
US9437257B2 Sensing circuit, memory device and data detecting method Physics 15 Active
US8509003B2 Read architecture for MRAM Physics 14 Active
US6808985B1 Products derived from embedded flash/EEPROM products Electricity 14 Expired
US6226213A Reference cell array to generate the reference current for sense amplifier Physics 13 Expired
US6348832B1 Reference current generator with small temperature dependence Physics 12 Expired
US9196360B2 Operating resistive memory cell Physics 12 Active
US9153343B2 Memory device having RRAM-based non-volatile storage array Physics 12 Active
US6566847B1 Low power charge pump regulating circuit Physics 12 Expired
US8325521B2 Structure and inhibited operation of flash memory with split gate Physics 11 Active
US8923040B2 Accommodating balance of bit line and source line resistances in magnetoresistive random access memory Physics 11 Active
US9401258B2 Fuse structure Electricity 9 Active
US7259543B2 Sub-1V bandgap reference circuit Physics 9 Expired
US9787176B2 Charge pump Electricity 9 Active
US8817553B2 Charge pump control scheme using frequency modulation for memory word line Physics 9 Active
US7495958B2 Program and erase methods and structures for byte-alterable flash memory Emerging Cross-Sectional Technologies 9 Active
US8964458B2 Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity current Physics 8 Active
US9406367B2 Method and apparatus for MRAM sense reference trimming Physics 7 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.