Ion source device and ion beam generating method
US9153405B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Dec 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/146
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source device has a configuration in which a cathode is provided in an arc chamber having a space for plasma formation, and a repeller is disposed to face a thermal electron discharge face of the cathode by interposing the space for plasma formation therebetween. An external magnetic field that is induced by a source magnetic field unit is applied to the space for plasma formation in a direction parallel to an axis that connects the cathode and the repeller. An opening is provided in a place corresponding to a portion in the repeller with the highest density of plasma that is formed in the space for plasma formation, and an ion beam is extracted from the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.