Method for improving the electromigration resistance in the copper interconnection process
US9153500B2 · kind B2 · utility
4Cited by
1References
2Claims
0Family size
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Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | Dec 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method used in a process no greater than 32 nm to improve the electromigration resistance of Cu interconnects. Coating layers on Cu interconnects, such as CuSi3, CuGe, and CuSiN, can be prepared by autoregistration, and with the use of new impervious layer materials, the electromigration resistance of Cu interconnects can be largely improved and the high conductivity thereof can be kept, which provides an ideal solution for interconnection process for process nodes no greater than 32 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.