Method for manufacturing semiconductor device
US9153501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2011 |
| Grant date | Oct 6, 2015 |
| Priority date | — |
| Expiry date | May 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0191
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes implanting indium into a first region of a semiconductor substrate; forming a first gate insulation film having a first film thickness in the first region and a second region different from the first region after the implanting; removing the first gate insulation film from the first region; applying heat treatment to the semiconductor substrate after the forming; and forming a second gate insulation film having a second film thickness on the first region after the applying. In the method, a temperature falling rate of the heat treatment in the applying is 20° C. per second or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.